CL(IDD):14 cycles
Row Cycle Time (tRCmin):46.5ns(min.)
Refresh to Active/Refresh:260ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin):32.75ns(min.)
Maximum Operating Power:TBD W*
UL Rating:94 V - 0
Operating Temperature:0oC to +85oC
Storage Temperature:-55oC to +100oC
*Power will vary depending on the SDRAM used.
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP - 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Dual-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- Height 1.340” (34.04mm), w/heatsink
|